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The rapid deployment of next generation wireless communications
systems a worldwide basis creates a unique opportunity for
the semiconductor industry. High-speed networks require massive
computing power and analog and radio frequency devices with
wide dynamic range and bandwidth. The semiconductor technologies
required to implement these systems will be highlighted, with
particular emphasis on silicon – both CMOS and Si/SiGe
HBT BiCMOS technology, as key enabler.
This paper will summarize the semiconductor technological
requirements for next generation communications systems, and
highlight some trends and challenges for the future. In particular,
Si/SiGe HBT BiCMOS technology occupies a “sweet-spot”
for communications applications, with performance comparable
to the best GaAs or InP devices, and a level of integration
and cost structure nearly equal that of digital CMOS technology.
CMOS technology for wireless applications has also made dramatic
progress for lower performance applications. This paper will
summarize the emerging wireless requirements at the system
level, followed by a brief discussion of the differing roles
that CMOS and SiGe technology will play in moving these technologies
into production.
Biography
Lawrence E. Larson received the BS degree in Electrical Engineering
in 1979, and the M. Eng. degree in 1980, both from Cornell
University, Ithaca, NY., He received the PhD degree in Electrical
Engineering from the University of California -Los Angeles
in 1986, and an MBA from UCLA in 1996. From 1980 to 1996 he
was at Hughes Research Laboratories in Malibu, CA, where he
directed the development of high-frequency microelectronics
in GaAs, InP and Si/SiGe and MEMS technologies. He joined
the faculty at the University of California -San Diego, in
1996, where he is the inaugural holder of the Communications
Industry Chair. He is currently Director of the UCSD Center
for Wireless Communications. During the 2000-2001 academic
year, he was at IBM Research in San Diego, CA, where he directed
the development of RFICs for 3G applications. He was recipient
of the 1995 Hughes Electronics sector Patent Award for his
work on RF MEMs, co-recipient of the 1996 Lawrence A. Hyland
Patent Award of Hughes Electronics, for his work on low-noise
millimeterwave HEMTs, and the 1999 IBM Microelectronics Excellence
Award for his work in Si/SiGe HBT technology. He has published
over 150 papers, co-authored three books, has received 24
US patents, and is a Fellow of the IEEE.
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